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IRFP460LC of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge

Published on 2012 年 5 月 18 日, by in I.

IRFP460LC HEXFET® Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs RatingReduced Ciss, Coss, CrssIsolated Central Mounting HoleDynamic dv/dt RatedRepetitive Avalanche RatedDescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds

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IRFP460 PowerMOS transistors Avalanche energy rated

Published on 2012 年 4 月 11 日, by in I.

FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching

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