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2SC1971 NPN EPITAXIAL PLANAR TYPE

Published on 2012 年 4 月 11 日, by in 2.

DESCRIPTION 2SC1971 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. FEATURES • High power gain: Gpe ^ 10dB @VCC = 13.5V, P0=~6W,f= 175MHz • Emitter ballasted construction, gold metallization for high reliability and good performances. • TG-220 package similar is combinient for mounting. • Ability of withstanding more

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2SC1971 NPN SILICON RF POWER TRANSISTOR

Published on 2012 年 4 月 11 日, by in 2.

DESCRIPTION: The ASI 2SC1971 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1971 in Most Applications • High Gain Reduces Drive Requirements • Economical TO-220CE Package DESCRIPTION ·High Power Gain- : Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers

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