TMOS POWER FET4.0 AMPERES800 VOLTSRDS(on) = 3.0 OHMMotorola Preferred DeviceN–Channel Enhancement–Mode Silicon GateThis high voltage MOSFET uses an advanced terminationscheme to provide enhanced voltage–blocking capability withoutdegrading performance over time. In addition, this advanced TMOSE–FET is designed to withstand high energy in the avalanche andcommutation modes. The new energy efficient design also offers adrain–to–source diode with
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SANYO SemiconductorsDATA SHEET2SK4100LS N-Channel Silicon MOSFETGeneral-Purpose Switching DeviceApplicationsFeatures• Low ON-resistance, low input capacitance, ultrahigh-speed switching.• Adoption of high reliability HVP process.• Attachment workability is good by Mica-less package.• Avalanche resistance guarantee.
LM3914Dot/Bar Display DriverGeneral DescriptionThe LM3914 is a monolithic integrated circuit that sensesanalog voltage levels and drives 10 LEDs, providing a linearanalog display. A single pin changes the display from a movingdot to a bar graph. Current drive to the LEDs is regulatedand programmable, eliminating the need for resistors. Thisfeature is one that allows operation of
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TDA1552Q2 x 22 W BTL stereo car radiopower amplifierGENERAL DESCRIPTIONThe TDA1552Q is an integrated class-B output amplifier in a 13-lead single-in-line (SIL) plastic power package.The circuit contains 2 x 22 W amplifiers in Bridge Tied Load (BTL) configuration. The device is primarily developed forcar radio applications.Features· Requires very few external components· High output power· Low
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TDA3618JRMultiple voltage regulator withswitch and ignition buffersFEATURESGeneral· Extremely low noise behaviour and good stability withvery small output capacitors· Two VP-state controlled regulators (regulators 1 and 3)and a power switch· Regulator 2, reset and ignition buffer operate duringload dump and thermal shutdown· Separate control pins for switching regulators(regulators 1 and 3) and the power switch· Supply
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1 kV SWITCHMODE SeriesThese transistors are designed for high–voltage, high–speed, power switching ininductive circuits where fall time is critical. They are particularly suited forline–operated switchmode applications.• Switching Regulators • Collector–Emitter Voltage — VCEV = 1000 Vdc• Inverters • Fast Turn–Off Times• Solenoids 50 ns Inductive Fall Time — 100C (Typ)• Relay Drivers 90 ns Inductive
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designed for use in industrial–military power amplifer and switching circuitapplications.• High Collector Emitter Sustaining —VCEO(sus) = 100 Vdc (Min) — 2N6274VCEO(sus) = 120 Vdc (Min) — 2N6275VCEO(sus) = 150 Vdc (Min) — 2N6277• High DC Current Gain —hFE = 30–120 @ IC = 20 AdchFE = 10 (Min) @ IC = 50 Adc• Low
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IRFP36023A, 400V, 0.200 Ohm, N-Channel PowerMOSFETThis advanced power MOSFET is designed, tested, andguaranteed to withstand a specified level of energy in thebreakdown avalanche mode of operation. These areN-Channel enhancement mode silicon gate power fieldeffect transistors designed for applications such as switchingregulators, switching converters, motor drivers, relay driversand drivers for high power bipolar switching transistorsrequiring high
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IR21323-PHASE BRIDGE DRIVERProduct SummaryFeaturesn Floating channel designed for bootstrap operationFully operational to +600VTolerant to negative transient voltagedV/dt immunen Gate drive supply range from 10 to 20Vn Undervoltage lockout for all channelsn Over-current shutdown turns off all six driversn Independent half-bridge driversn Matched propagation delay for all channelsn Outputs out of phase with inputsDescriptionThe IR2132 is
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MC1489, MC1489AQuad Line EIA-232DReceiversThe MC1489 monolithic quad line receivers are designed tointerface data terminal equipment with data communicationsequipment in conformance with the specifications of EIA StandardNo. EIA−232D.Features• Input Resistance − 3.0 k to 7.0 k• Input Signal Range − ± 30 V• Input Threshold Hysteresis Built In• Response Controla) Logic Threshold Shiftingb) Input Noise Filtering•
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